DG648BH45 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG648BH45

Gate Turn-off Thyristor

Dynex Semiconductor 

30

Conditions:

CS = 2.0µF,

IT = 2000A

25

DG648BH45

20

Tj = 125°C

15

Tj = 25°C

10

20

30

40

50

60

70

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.21 Gate storage time vs rate of rise of reverse gate current

2.0

Conditions:

CS = 2.0µF,

dIGQ/dt = 40A/µs

1.5

Tj = 125°C

Tj = 25°C

1.0

0.5

0

0

500

1000

1500

2000

2500

3000

On-state current IT - (A)

Fig.22 Gate fall time vs on-state current

13/19

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