DG648BH45 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG648BH45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG648BH45

0.9VD

VD

0.9IT

dVD/dt

IT

VD VDM

0.1VD

td tr

dIFG/dt

0.1IFG

tgt

IFG

VFG

tw1

VDP

tgs

ITAIL

tgf

tgq

IG(ON)

0.1IGQ

QGQ

0.5IGQM

IGQM

V(RG)BR

VRG

Recommended gate conditions:

ITCM = 2000A

IFG = 30A

IG(ON) = 7A d.c.

tw1(min) = 20µs

IGQM = 690A

diGQ/dt = 40A/µs

QGQ = 6000µC

VRG(min) = 2V

VRG(max) = 16V

These are recommended Dynex Semiconductor conditions. Other conditions are permitted

according to users gate drive specifications.

Fig.29 General switching waveforms

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