IXGH10N60U1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH10N60U1 Datasheet PDF : 6 Pages
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IXGH10N60U1 IXGH10N60AU1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
R
thJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
4
8
750
VCE = 25 V, VGE = 0 V, f = 1 MHz
125
30
50
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
15
25
Inductive
load,
T
J
=
25°C
100
IC = IC90, VGE = 15 V, L = 100 µH
200
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
150
Ω
0.4
Switching times may increase
600
for VCE (Clamp) > 0.8 • VCES,
10N60AU1
300
higher TJ or increased RG
10N60AU1
0.6
100
Inductive
load,
T
J
=
125°C
200
IC = IC90, VGE = 15 V, L = 100 µH
1
V = 0.8 V , R = R = 150
CE
CES G
off
900
Ω
10N60U1
570
Switching times may increase 10N60AU1
360
for VCE (Clamp) > 0.8 • VCES,
10N60U1
2.0
higher TJ or increased RG
10N60AU1
1.2
0.25
S
pF
pF
pF
70 nC
25 nC
45 nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
1500 ns
2000 ns
600 ns
mJ
mJ
1.25 K/W
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VF
IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.75 V
IRM
trr
RthJC
IF = IC90, VGE = 0 V, -diF/dt = 64 A/µs
2.5
VR = 360 V
TJ = 100°C 165
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C 35
A
ns
50 ns
2.5 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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