IXGH10N60U1 Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXGH10N60U1 Datasheet PDF : 6 Pages
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IXGH10N60U1 IXGH10N60AU1
Fig. 1 Saturation Characteristics
20
18 TJ = 25°C
16
14
VGE=15V 13V
11V
9V
12
10
8
7V
6
4
2
0
0
1
2
3
4
5
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
TJ = 25°C
9
8
7
6
5
4
IC = 20A
3
IC = 10A
2
IC = 5A
1
0
5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
Fig. 5 Input Admittance
20
18
16
14
12
10
8
6
4
2
0
0
V = 10 V
CE
TJ = 25°C
TJ = 125°C
123456
TJ = - 40°C
7 8 9 10
VGE - Volts
© 1996 IXYS All rights reserved
Fig. 2
Output Characterstics
100
90 TJ = 25°C
80
70
60
50
40
30
20
10
0
0246
VGE = 15V
13V
11V
9V
7V
8 10 12 14 16 18 20
VCE - Volts
Fig. 4
Temperature Dependence
of Output Saturation Voltage
1.5
VGE = 15V
1.4
IC = 20A
1.3
1.2
1.1
IC = 10A
1.0
0.9
0.8
0.7
IC = 5A
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6
Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGE(th)
1.1
IC = 250µA
1.0
0.9
BV CES
IC = 250µA
0.8
0.7
GN
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
JNB
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