BU508DF Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU508DF

Silicon NPN Power Transistors

New Jersey Semiconductor 

Silicon NPN Power Transistor

BU508DF

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA ;lB=0,L=25mH

700

V

VcE(sat) Collector-Emitter Saturation Voltage IC=4.5A;IB=1.6A

1.0

V

VeE(sat) Base-Emitter Saturation Voltage

IC=4.5A;IB=2A

1.1

V

IEBO

Emitter Cutoff Current

ICES

Collector Cutoff Current

HFE

DC Current Gain

VEB= 5V; lc=0

VCB= BVoeo ;!E= 0

VCB=BVCBo;lE=0;Tc=125'C

lc= 0.5A ; VCE= 5V

10

300 mA

1.0

2.0

mA

30

fr

Current-Gain—Bandwidth Product lc=0.1A;VCE=5V

7

MHz

COB

Output Capacitance

lE=0;VcB=10V;f,es,= 1MHz

125

PF

VECF C-E Diode Forward Voltage

IF= 4.5A

1.6 2.0

V

Share Link: