BU508DF Ver la hoja de datos (PDF) - New Jersey Semiconductor
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Fabricante
BU508DF Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BU508DF
• High Switching Speed
• High Voltage
• Built-in Integrated Diode
APPLICATIONS
• Designed for use in horizontal deflection circuits of
colour TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
700
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current
4
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC-25'C
Tj
Junction Temperature
Tstg
Storage Temperature
6
A
34
W
150
°C
-65-150 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 3.7 K/W
2
k^^^^^^^fc
•
* b*
1 23
10-
-*3
PIN 1.BASE
2. COLLECTOR
3.HW1ITTER
TC-3PFa package
-«>— E
•*— 1
-*- C
—*• S"i—
3s'f
f°r
I
A]
u, r_
T H"
ri
*
K
-»> ^~\—3^
t
I
•*—^
' (..
mm
DIM MIN MAX
A 20.70 21.30
B 14.70 15JO
C 4.90 5,20
L! 0.90 1.10
F
3.20 3.40
H 3.70 4.30
J
0.50 0.70
K 16.40 17.00
L
1.90 2.10
N 10.80 11.00
Q
5.50 6.00
R
1.30 2.20
s
3.10 3.50
T
8,70 930
u 0.56 0.75
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Coflductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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