SMDB05V Ver la hoja de datos (PDF) - SEOUL SEMICONDUCTOR

Número de pieza

componentes Descripción

Fabricante

SMDB05V

Side View LED Of Reflector Type

SEOUL SEMICONDUCTOR 

A P CP CW M_4828539:W P _0000001W P _0000001

2. Absolute maximum ratings

Parameter

Symbol

Value

(Ta = 25℃)

Unit

Power Dissipation

DC Forward Current

Peak Forward Current

Reverse Voltage

Operating Temperature

Storage Temperature

Junction Temperature

Pd*1

IF

IFM *2

VR

Topr

Tstg

Tj max

90

30

100

5

-30 ~ +85

-40 ~ +100

105

mW

mA

mA

V

ºC

ºC

ºC

*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.

*2 IFM was measured at TW ≤ 0.1msec of pulse width and D ≤ 1/10 of duty ratio.

3. Electro-Optical characteristics

(Ta = 25℃)

Parameter

Symbol Condition

Min

Typ

Max

Unit

Forward

Voltage*1

Rank Z26

Rank Z28

Reverse Voltage

Rank S21H

Rank S22H

Rank S23H

Luminous

Intensity*2

Rank S24H

Rank S25H

Rank S26H

Rank S27H

Rank S28H

Rank S29H

Viewing Angle *3

Thermal Resistance

Electro-Static Discharge Threshold

VF

VR

IV

2 ½

Rth(j-s)*4

ESD

IF =20mA

IR= 3A

IF =20mA

IF =20mA

(HBM)

2.6

2.8

0.6

2100

2200

2300

2400

2500

2600

2700

2800

2900

-

-

-

-

-

-

-

-

-

-

-

120

140

±5,000

2.8

3.0

0.9

2200

2300

2400

2500

2600

2700

2800

2900

3000

V

V

mcd

deg.

ºC/W

V

*1 Forward voltage measurement allowance is ±0.1V

*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the

mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%.

*3 21/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.

Rev. 00

[Note] All measurements were made under the standardized environment of SSC.

October, 2012

www.acrich.com

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Document No. : QP-7-07-18 (Rev.00) 공통_을

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