IS61LPS25632T/D/J, IS61LPS25636T/D/J, IS61LPS51218T/D/J
®
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
TBIAS
Temperature Under Bias
TSTG
Storage Temperature
PD
Power Dissipation
IOUT
Output Current (per I/O)
VIN, VOUT Voltage Relative to GND for I/O Pins
VIN
Voltage Relative to GND for
for Address and Control Inputs
Value
Unit
–40 to +85
°C
–55 to +150
°C
1.6
W
100
mA
–0.5 to VCCQ + 0.5 V
–0.5 to VCC + 0.5 V
VCC
Voltage on Vcc Supply Relatiive to GND
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions
may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage Current
ILO
Output Leakage Current
Test Conditions
IOH = –4.0 mA (3.3V)
IOH = 1.0 mA (2.5V)
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
GND ≤ VIN ≤ VCC(1)
GND ≤ VOUT ≤ VCCQ, OE = VI
2.5V (I/O)
3.3V (I/O)
Min.
Max.
Min.
Max.
Unit
2.0
—
2.4
—
V
—
0.4
—
0.4
V
1.7 VCC + 0.3
2.0 VCC + 0.3
V
–0.3
0.7
–0.3
0.8
V
–5
5
–5
5
µA
–5
5
–5
5
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
11
PRELIMINARYINFORMATION Rev. 00B
04/29/02