IRG4PC40F Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRG4PC40F

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PC40F

50

V GE = 15V

2.5

VGE = 15V

80µs PULSE WIDTH

IC = 54A

40

2.0

30

20

10

0

25

50

75

100

125

150

TC , C ase Tem perature (°C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

IC = 27A

1.5

I C = 14A

1.0

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

1

D = 0 .5 0

0.2 0

0.1

0.1 0

PD M

0 .05

SINGLE PULSE

0.0 2

(THERMAL RESPONSE)

0.0 1

t1

t2

N otes:

1. Duty factor D = t1 / t 2

0.01

2. P ea k TJ = P D M x Z thJ C + T C

0.00001

0.0001

0.001

0.01

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4

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