IRG4PC40F Ver la hoja de datos (PDF) - International Rectifier

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componentes Descripción

Fabricante

IRG4PC40F

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PC40F

80

60

Square wave:

40

60% of rated

vo lt a ge

For both:

Duty cycle: 50%

TJ = 125°C

T sink = 90°C

G ate d rive as specified

P ow er Dissipation = 35W

Triangular wave:

Clam p voltage:

80% of rated

20

Ideal diodes

0

A

0.1

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000

1000

TJ = 25°C

100

TJ = 15 0°C

10

100

TJ = 150°C

TJ = 25°C

10

VGE = 15V

1

20µs PU LSE W ID TH A

1

10

VCE , Collec tor-to-Em itter V oltage (V )

Fig. 2 - Typical Output Characteristics

V CC = 50V

1

5µs PULSE WIDTH A

5

6

7

8

9

10

11

12

VG E, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

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