WeEn Semiconductors
BYV25X-600
Rectifier diode, ultrafast
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Rth(j-h)
thermal resistance
from junction to
heatsink
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
with heatsink compound; Fig 3
without heatsink compound
in free air
Min Typ Max Unit
-
-
5.5
K/W
-
-
5.9
K/W
-
60
-
K/W
10
Zth(j-h)
(K/W)
1
001aaf257
10- 1
P
δ=
tp
T
10- 2
10- 3
10- 6
10- 5 10- 4
10- 3 10- 2
tp
T
10- 1
t
1 10
tp (s)
Fig. 3. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol Parameter
Visol(RMS) RMS isolation voltage
Cisol
isolation capacitance
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz; from cathode to external
heatsink
Min Typ Max Unit
-
-
2500 V
-
10
-
pF
BYV25X-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 January 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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