BYV25X-600 Ver la hoja de datos (PDF) - WeEn Semiconductors
Número de pieza
componentes Descripción
Fabricante
BYV25X-600 Datasheet PDF : 11 Pages
| |||
WeEn Semiconductors
BYV25X-600
Rectifier diode, ultrafast
11. Characteristics
Table 8. Characteristics
Symbol Parameter
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
Conditions
IF = 5 A; Tj = 25 °C; Fig. 4
IF = 5 A; Tj = 150 °C; Fig. 4
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 100 °C
Qr
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/μs;
Tj = 25 °C; Fig. 5
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; Fig. 5
IRM
peak reverse recovery IF = 10 A; VR = 30 V; dIF/dt = 50 A/μs;
current
Tj = 100 °C; Fig. 5
VFR
forward recovery voltage IF = 10 A; dIF/dt = 100 A/μs;
Tj = 25 °C; Fig. 6
Min Typ Max Unit
-
1.12 1.30 V
-
0.97 1.11 V
-
2
50
μA
-
0.1 0.35 mA
-
40
70
nC
-
50
60
ns
-
3
5.5 A
-
3.2 -
V
15
IF
(A)
10
5
003aac232
(1) (2) (3)
IF
dlF
dt
trr
Qr
time
10 %
100 %
IR
IRM
0
0
0.4
0.8
1.2
1.6
VF (V)
001aab911
Fig. 4.
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Forward current as a function of forward voltage
Fig. 5.
Reverse recovery definitions; ramp recovery
BYV25X-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 January 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
5 / 11
Share Link: 