1N60 Ver la hoja de datos (PDF) - Zibo Seno Electronic Engineering Co.,Ltd
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1N60 Datasheet PDF : 6 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
1N60 1N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
1N60
Drain-Source Breakdown Voltage
1N65
BVDSS VGS=0V, ID=250μA
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ ID=250μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=300V, ID=1.0A, RG=50Ω
(Note 4,5)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=480V, VGS=10V, ID=1.0A
(Note 4,5)
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS =1.0A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR
VGS=0V, IS=1.0A
QRR
dIF/dt=100A/μs (Note1)
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
5. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
600
V
650
V
10 μA
100 nA
-100 nA
0.4
V/℃
2.0
4.0 V
9.3 11.5 Ω
120 150 pF
20 25 pF
3.0 4.0 pF
5 20 ns
25 60 ns
7 25 ns
25 60 ns
5.0 6.0 nC
1.0
nC
2.6
nC
1.4 V
1.2 A
4.8 A
160
ns
0.3
μC
1N60 1N65
3 of 6
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