1N60 Ver la hoja de datos (PDF) - Zibo Seno Electronic Engineering Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
1N60 Datasheet PDF : 6 Pages
| |||
Z ibo Seno Electronic Engineering Co., Ltd.
1N60 1N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
1N60
600
V
1N65
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
1.0
A
Continuous Drain Current
ID
1.0
A
Pulsed Drain Current (Note 1)
IDM
4.8
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
Repetitive (Note 1)
EAR
50
mJ
4.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-251/IPAK
28
W
TO-252/DPAK
28
W
Power Dissipation
TO-220
PD
40
W
TO-220F
TO-92(Ta=25℃)
21
W
1
W
Junction Temperature
Operating Temperature
TJ
+150
℃
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
TO-251/IPAK
TO-252/DPAK
TO-220
TO-220F
TO-92
TO-251/IPAK
TO-252/DPAK
TO-220
TO-220F
SYMBOL
θJA
θJc
RATINGS
110
110
62.5
62.5
140
4.53
4.53
3.13
5.95
UNIT
℃/W
℃/W
1N60 1N65
2 of 6
www.senocn.com
Alldatasheet
Share Link: 