MTSF3N02HD Ver la hoja de datos (PDF) - ON Semiconductor
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MTSF3N02HD Datasheet PDF : 12 Pages
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MTSF3N02HD
TYPICAL ELECTRICAL CHARACTERISTICS
8
VGS = 10 V
TJ = 25°C
7
4.5 V
1.9 V
2.9 V
6
2.5 V
2.3 V
5
2.1 V
4
1.7 V
3
2
1.5 V
1
0
0
0.4
0.8
1.2
1.6
2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
8
7 VDS ≥ 10 V
6
5
4
3
TJ = -55°C
2
25°C
1
100°C
0
1
1.2
1.4
1.6
1.8
2
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0
VGS = 3.8 V
TJ = 25°C
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance versus
Gate–to–Source Voltage
0.06
TJ = 25°C
0.05
0.04
0.03
VGS = 2.7 V
4.5 V
0.02
0.01
0
1
2
3
4
5
6
7
8
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 4.5 V
ID = 1.9 A
1.5
1.0
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
0.5
1
25°C
0
-ā50 -ā25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 7. On–Resistance Variation
with Temperature
0.1
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
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