MTSF3N02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk ≥ 2.0)
(Notes 2. & 4.) V(BR)DSS
(VGS = 0 Vdc, ID = 250 µAdc)
20
–
Temperature Coefficient (Positive)
–
16
Vdc
–
–
mV/°C
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(Cpk ≥ 2.0)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
(Note 4.)
IDSS
IGSS
VGS(th)
µAdc
–
–
1.0
–
–
25
–
–
100
nAdc
Vdc
0.7
0.98
1.1
–
2.65
–
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 3.8 Adc)
(VGS = 2.7 Vdc, ID = 1.9 Adc)
(Cpk ≥ 2.0)
(Note 4.)
RDS(on)
–
–
mΩ
30
40
40
50
Forward Transconductance (VDS = 10 Vdc, ID = 1.9 Adc)
(Note 2.)
gFS
4.0
7.5
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
–
475
–
pF
–
255
–
–
110
–
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
9.5
–
ns
Rise Time
Turn–Off Delay Time
(VDS = 10 Vdc, ID = 3.8 Adc,
VGS = 4.5 Vdc, RG = 6 Ω) (Note 2.)
tr
td(off)
–
45
–
–
50
–
Fall Time
tf
–
62
–
Turn–On Delay Time
td(on)
–
19
–
ns
Rise Time
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 1.9 Adc,
VGS = 2.7 Vdc, RG = 6 Ω) (Note 2.)
tr
td(off)
–
130
–
–
38
–
Fall Time
tf
–
47
–
Gate Charge
QT
–
12
17
nC
(VDS = 16 Vdc, ID = 3.8 Adc,
VGS = 4.5 Vdc)
Q1
–
1.0
–
Q2
–
5.0
–
Q3
–
3.5
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.8 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 3.8 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
Vdc
–
0.83
1.0
–
0.68
–
Reverse Recovery Time
(IS = 3.8 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 2.)
trr
–
46
–
ns
ta
–
23
–
tb
–
23
–
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit – Typ
Cpk = 3 x SIGMA
QRR
–
0.05
–
µC
http://onsemi.com
3