MTB6N60E1 Ver la hoja de datos (PDF) - ON Semiconductor
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MTB6N60E1 Datasheet PDF : 7 Pages
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MTB6N60E1
TYPICAL ELECTRICAL CHARACTERISTICS
12
TJ = 25°C
10
8
VGS = 10 V
6V
7V
8V
12
VDS ≥ 10 V
10
8
6
5V
4
2
4V
0
0 2 4 6 8 10 12 14 16 18
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
6
4
2
100°C
25°C
TJ = − 55°C
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
VGS = 10 V
2.0
1.5
1.0
0.5
TJ = 100°C
25°C
− 55°C
0
0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
1.4
TJ = 25°C
1.3
1.2
1.1
VGS = 10 V
1.0
15 V
0.9
0.8
0
2
4
6
8
10
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 3 A
2
1.5
1
0.5
0
− 50 − 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10000
VGS = 0 V
1000
100
10
TJ = 125°C
100°C
25°C
1
0
100
200
300
400
500
6
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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