MTB6N60E1 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MTB6N60E1 Datasheet PDF : 7 Pages
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MTB6N60E1
shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
10 μs
100 μs
1 ms
1.0
10 ms
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT dc
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
450
400
ID = 6 A
350
300
250
200
150
100
50
0
25
50
75
100
125
1
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.001
0.01
0.1
t, TIME (SECONDS)
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1
1
IS
tp
di/dt
trr
ta
tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
3
RθJA = 50°C/W
Board material = 0.065 mil FR−4
2.5
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
2.0
1.5
1
0.5
0
25
50
75
100
125
1
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
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6
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