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BYW29ED-200 Datasheet PDF : 11 Pages
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WeEn Semiconductors
BYW29ED-200
Ultrafast power diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
IF = 8 A; Tj = 25 °C; Fig. 5
IF = 20 A; Tj = 25 °C; Fig. 5
IF = 8 A; Tj = 150 °C; Fig. 5
VR = 200 V; Tj = 25 °C
VR = 200 V; Tj = 100 °C
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/
µs; Tj = 25 °C; ramp recovery; Fig. 6;
Fig. 7; Fig. 8
step recovery; when switched from IF =
0.5 A to IR = 1 A measured at IR = 0.25
A
IRM
peak reverse recovery IF = 10 A; VR = 30 V; dIF/dt = 50 A/µs;
current
Tj = 25 °C; Fig. 9
Qr
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; Fig. 10
VFR
forward recovery
IF = 1 A; dIF/dt = 10 A/µs; Fig. 11
voltage
Min Typ Max Unit
-
0.92 1.05 V
-
1.1 1.3 V
-
0.8 0.895 V
-
2
10
µA
-
0.2 0.6 mA
-
20
25
ns
-
15
20
ns
-
-
1.8 A
-
4
11
nC
-
1
-
V
24
IF
(A)
18
003aac674
IF
dlF
dt
trr
time
12
25 %
(1)
(2) (3)
6
Qr
100 %
0
0
0.4
0.8
1.2
1.2
VF(V)
Vo = 0.791 V; Rs = 0.013 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 5. Forward current as a function of forward voltage
IR
IRM
003aac562
Fig. 6. Reverse recovery definitions; ramp recovery
BYW29ED-200
Product data sheet
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26 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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