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BYW29ED-200 Ver la hoja de datos (PDF) - WeEn Semiconductors

Número de pieza
componentes Descripción
Fabricante
BYW29ED-200
WEEN
WeEn Semiconductors WEEN
BYW29ED-200 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
BYW29ED-200
Ultrafast power diode
26 September 2018
Product data sheet
1. General description
Ultrafast, epitaxial rectifier diode in a SOT428 (DPAK) surface-mountable package.
2. Features and benefits
Low forward voltage drop
Fast switching
Soft recovery characteristic
Surface-mountable package
High thermal cycling performance
Low thermal resistance
3. Applications
High-frequency switched-mode power supplies
Low loss rectification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VR
VRRM
reverse voltage
DC
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 128 °C; square-wave
pulse; Fig. 1; Fig. 2
IFSM
non-repetitive peak
forward current
Static characteristics
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse; with reapplied VRRM(Max)
VF
forward voltage
Dynamic characteristics
IF = 8 A; Tj = 25 °C; Fig. 5
IF = 20 A; Tj = 25 °C; Fig. 5
IF = 8 A; Tj = 150 °C; Fig. 5
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/
µs; Tj = 25 °C; ramp recovery; Fig. 6;
Fig. 7; Fig. 8
step recovery; when switched from IF =
0.5 A to IR = 1 A measured at IR = 0.25
A
Min Typ Max Unit
-
-
200 V
-
-
200 V
-
-
8
A
-
-
80
A
-
0.92 1.05 V
-
1.1 1.3 V
-
0.8 0.895 V
-
20
25
ns
-
15
20
ns

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