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Fabricante

BYW29ED-200

Ultrafast power diode

WeEn Semiconductors 

WeEn Semiconductors

BYW29ED-200

Ultrafast power diode

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Rth(j-mb)

thermal resistance

from junction to

mounting base

with heatsink compound; Fig. 3

Rth(j-a)

thermal resistance

in free air; Fig. 4

[1]

from junction to

ambient free air

[1] Device mounted on an FR4 PCB, single-sided copper, tin plated and standard footprint

10

Zth(j-mb)

(K/W)

1

003aac673

7.0

Min Typ Max Unit

-

-

2.7 K/W

-

50

-

K/W

7.0

10-1

P

δ=

tp

T

10-2

tp

t

T

10-3

10-5 10-4 10-3 10-2 10-1

1

10

tp (s)

Fig. 3. Transient thermal impedance from junction to

mounting base as a function of pulse width

2.15

1.5

2.5

4.57

001aab021

Fig. 4. SOT428: minimum pad sizes for surface-

mounting

BYW29ED-200

Product data sheet

All information provided in this document is subject to legal disclaimers.

26 September 2018

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

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