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BYW29ED-200 Datasheet PDF : 11 Pages
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WeEn Semiconductors
BYW29ED-200
Ultrafast power diode
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
VRWM
crest working reverse
voltage
VR
IF(AV)
reverse voltage
average forward current
DC
δ = 0.5 ; Tmb ≤ 128 °C; square-wave
pulse; Fig. 1; Fig. 2
IFRM
repetitive peak forward δ = 0.5 ; tp = 25 µs; Tmb ≤ 128 °C
current
IFSM
IRRM
non-repetitive peak
forward current
repetitive peak reverse
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse; with reapplied VRRM(Max)
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; with reapplied VRRM(Max)
δ = 0.001 ; tp = 2 µs
IRSM
non-repetitive peak
tp = 100 µs
reverse current
Tstg
Tj
VESD
storage temperature
junction temperature
electrostatic discharge
voltage
C = 250 pF; R = 1.5 kΩ; all pins; human
body model
Min Max Unit
-
200 V
-
200 V
-
200 V
-
8
A
-
16
A
-
80
A
-
88
A
-
0.2 A
-
0.2 A
-40 150 °C
-
150 °C
-
8
kV
12
Ptot
(W)
Vo = 0.791 V
Rs = 0.013 Ω
8
δ = 0.5
0δ.2= 0.2
0δ.1= 0.1
4
P
003aac678 107
δ =δ =1.01
Tmb(max)
(°C)
128
δ=
tp
T
139
8
Ptot
(W)
Vo = 0.791 V
Rs = 0.013 Ω
6
003aac679 128
a = 1.57
a = 1.9
Tmb(max)
(°C)
a = 2.2
133.5
a = 2.8
4
a = 4.0
139
2
144.5
0
0
4
IF(AV) = IF(RMS) × √δ
tp
t
T
150
8
12
IF(AV) (A)
Fig. 1. Total power dissipation and permissible
mounting base temperature as a function of average
forward current; square waveform; maximum values
0
150
0
2
4
6
8
IF(AV) (A)
a = form factor = IF(RMS) / IF(AV)
Fig. 2. Total power dissipation and permissible
mounting base temperature as a function of average
forward current; sinusoidal waveform; maximum values
BYW29ED-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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