HV310LG-G Ver la hoja de datos (PDF) - Supertex Inc
Número de pieza
componentes Descripción
Fabricante
HV310LG-G Datasheet PDF : 7 Pages
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HV310
Electrical Characteristics (VIN = -10 to -90V, -40°C ≤ TA ≤ +85°C unless otherwise noted)
Sym Parameter
Min Typ Max Units Conditions
Current Limit (Referenced to VEE pin)
VSENSE Current limit threshold voltage
Gate Drive Output (Referenced to VEE pin)
40
50
60
mV VUV = VEE + 1.9V, VOV = VEE + 0.5V
VGATE Maximum GATE drive voltage
9.0 10 11
V
VUV = VEE + 1.9V, VOV = VEE + 0.5V
IGATEUP GATE drive pull-up current
500 -
-
µA VUV = VEE + 1.9V, VOV = VEE + 0.5V
IGATEDOWN GATE drive pull-down current
40 -
-
mA VUV = VEE, VOV = VEE + 0.5V
Timing Control (Test Conditions: C =100µF, CRAMP = 10nF, VUV = VEE +1.9V, VOV = VEE +0.5V, External MOSFET is IRF5303)
IRAMP Ramp pin output current
- 10 -
µA VSENSE = 0V
tPOR Time from UV to GATE turn on1
2.0 -
-
ms ---
tRISE
Time from GATE turn on to VSENSE limit
400 -
-
µs ---
tLIMIT Duration of current limit mode
-
- 5.0 ms ---
tPWRGD Time from current limit to PWRGD
- 5.0 -
ms ---
VRAMP Voltage on ramp pin in current limit mode2
-
3.6
-
V ---
Power Good Output (Referenced to VEE pin)
VPWRGD
Power good pin breakdown voltage
Power good pin output low voltage
Dynamic Characteristics
90 -
-
- 0.5 0.8
V ---
V
IPWRGD = 1.0mA
tGATEHLOV OV delay
-
- 500 ns ---
tGATEHLUV UV delay
-
- 500 ns ---
Notes
1. This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.
2. This voltage depends on the characteristics of the external N-Channel MOSFET. VGS(th) = 3.0V for an IRF530.
3. IRF530 is a registered trademark of International Rectifier.
PWRGD Logic
Device
Condition
HV310
Not Ready
Ready
PWRGD
1
Hi Z
0
VEE
Waveforms
Drain
50V/div
VIN
50V/div
GATE
5.0V/div
IINRUSH
500mA/div
5.0ms/div
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
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