HV300LG-G Ver la hoja de datos (PDF) - Supertex Inc
Número de pieza
componentes Descripción
Fabricante
HV300LG-G Datasheet PDF : 7 Pages
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HV300
Electrical Characteristics (VIN = -10 to -90V, -40°C ≤ TA ≤ +85°C unless otherwise noted)
Sym Parameter
Min Typ Max Units Conditions
Current Limit (Referenced to VEE pin)
VSENSE Current limit threshold voltage
40
50
60
mV VUV = VEE + 1.9V, VOV = VEE + 0.5V
Gate Drive Output (Referenced to VEE pin)
VGATE
IGATEUP
IGATEDOWN
Maximum GATE drive voltage
GATE drive pull-up current
GATE drive pull-down current
9.0 10 11
V
VUV = VEE + 1.9V, VOV = VEE + 0.5V
500 -
-
µA VUV = VEE + 1.9V, VOV = VEE + 0.5V
40 -
-
mA VUV = VEE, VOV = VEE + 0.5V
Timing Control (Test Conditions: C =100µF, CRAMP = 10nF, VUV = VEE +1.9V, VOV = VEE +0.5V, External MOSFET is IRF5303)
IRAMP Ramp pin output current
- 10 -
µA VSENSE = 0V
tPOR Time from UV to GATE turn on1
2.0 -
-
ms ---
tRISE
Time from GATE turn on to VSENSE limit
400 -
-
µs ---
tLIMIT Duration of current limit mode
-
- 5.0 ms ---
tPWRGD Time from current limit to PWRGD
- 5.0 -
ms ---
VRAMP Voltage on ramp pin in current limit mode2
-
3.6
-
V ---
Power Good Output (Referenced to VEE pin)
VPWRGD
Power good pin breakdown voltage
Power good pin output low voltage
90 -
-
- 0.5 0.8
V ---
V
IPWRGD = 1.0mA
Dynamic Characteristics
tGATEHLOV OV delay
-
- 500 ns ---
tGATEHLUV UV delay
-
- 500 ns ---
Notes
1. This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.
2. This voltage depends on the characteristics of the external N-Channel MOSFET. VGS(th) = 3.0V for an IRF530.
3. IRF530 is a registered trademark of International Rectifier.
PWRGD Logic
Device
Condition
HV300
Not Ready
Ready
PWRGD
0
VEE
1
Hi Z
Waveforms
Drain
50V/div
VIN
50V/div
GATE
5.0V/div
IINRUSH
500mA/div
5.0ms/div
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
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