RF081L2STF Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RF081L2STF Datasheet PDF : 8 Pages
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RF081L2STF
Data Sheet
1.8
D.C.
1.6
D=0.8
1.4
D=0.5
1.2
half sin wave
1
0.8
D=0.2
0.6
D=0.1
D=0.05
0.4
0.2
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
1.4
1.2 D.C.
1
D=0.8
D=0.5
0.8
half sin wave
0.6
D=0.2
0.4
D=0.1
0.2 D=0.05
0A
Io
0V
t
VR
D=t/T
T
VR=160V
Tj=150°C
On glass-epoxy
substrate soldering land 2mm□
0
0
30
60
90
120
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
2
1.8 D.C.
1.6 D=0.8
1.4
D=0.5
1.2
1 half sin wave
0A
0V
t
T
0.8
D=0.2
0.6
0.4 D=0.1
D=0.05
0.2
0
0
30
60
90
120
150
CASE TEMPERATURE:Tl(°C)
DERATING CURVE (Io-Tl)
Io
VR
D=t/T
VR=160V
Tj=150°C
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4/4
2011.10 - Rev.A
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