RF081L2STF Ver la hoja de datos (PDF) - ROHM Semiconductor

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RF081L2STF

Super Fast Recovery Diode

ROHM Semiconductor 

Super Fast Recovery Diode

RF081L2STF

Series

Standard Fast Recovery

Dimensions (Unit : mm)

2.6±0.2

Applications

General rectification

6 65

①②

0.1±0.02

　　　 0.1

Features

1)Small power mold type.（PMDS）

2)Low switching loss

3)Low forward voltage

Construction

Silicon epitaxial planer

1.5±0.2

2.0±0.2

ROHM : PMDS

JEDEC : SOD-106

① ② Manufacture date

Taping dimensions (Unit : mm)

2.0±0.05

4.0±0.1

Data Sheet

AEC-Q101 Qualified

Land size figure (Unit : mm)

2.0

PMDS

Structure

φ1.55±0.05

0.3

2.9±0.1

4.0±0.1

φ1.55

Absolute maximum ratings (TI=25C)

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

VRM

D≥0.5

200

V

Reverse voltage

VR

Direct voltage

200

V

Glass epoxy substrate mounted

Average rectified forward current

Io

Tl=120°C

1.1

A

R-road, 60Hz half sin wave

Forward current surge peak

IFSM

60Hz half sin wave, Non-repetitive

one cycle peak value, Tj=25°C

25

A

Junction temperature

Tj

150

C

Storage temperature

Tstg

55 to 150 C

Electrical characteristics (Tj=25C)

Parameter

Symbol

Conditions

Min.

Forward voltage

VF

IF=1.1A

－

Reverse current

IR

VR=200V

－

Reverse recovery time

trr

IF=0.5A,IR=1A,Irr=0.25×IR

－

Thermal resistance

Rth(j-l)

junction to lead

－

Typ.

Max.

0.85

0.98

0.01

10

12

25

－

23

2.8MAX

Unit

V

μA

ns

°C/W

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© 2011 ROHM Co., Ltd. All rights reserved.

1/4

2011.10 - Rev.A

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