I2SK3565 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

I2SK3565

N-Channel MOSFET Transistor

Inchange Semiconductor 

iscN-Channel MOSFET Transistor

INCHANGE Semiconductor

2SK3565，I2SK3565

·FEATURES

·Low drain-source on-resistance:

RDS(ON) =2.0Ω (typ.)

·Enhancement mode:

Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Switching Voltage Regulators

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

900

VGS

Gate-Source Voltage

±30

ID

Drain Current-Continuous

5

IDM

Drain Current-Single Pulsed

15

PD

Total Dissipation @TC=25℃

45

Tj

Max. Operating Junction Temperature

150

Tstg

Storage Temperature

-55~150

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(ch-c) Channel-to-case thermal resistance

Rth(ch-a) Channel-to-ambient thermal resistance

MAX

2.78

62.5

UNIT

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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