iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK3565,I2SK3565
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.0mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=3A
IGSS
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=720V; VGS= 0V
VSDF
Diode forward voltage
IDR =5A, VGS = 0 V
MIN TYP MAX UNIT
900
V
2.0
4.0
V
2000 2500 mΩ
±10 μA
100 μA
1.7
V
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