MJE210G Ver la hoja de datos (PDF) - ON Semiconductor
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MJE210G Datasheet PDF : 6 Pages
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MJE200G (NPN), MJE210G (PNP)
VCC
+ 30 V
+11 V
0
25 ms
- 9.0 V
RB
51
RC
SCOPE
D1
tr, tf ≤ 10 ns
- 4 V
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Figure 2. Switching Time Test Circuit
1K
500
td
300
200
100
50
30
tr
20
10
5
3
MJE200
2
MJE210
VCC = 30 V
IC/IB = 10
TJ = 25°C
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.02
0.05
0.01
0.03 0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
0.2
qJC(t) = r(t) qJC
qJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
Figure 4. Thermal Response
50
100
200
10
7.0
1.0 ms
500 ms 100 ms
5.0
3.0
dc
5.0 ms
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
2.0 3.0
5.0 7.0 10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
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