MJE210G Ver la hoja de datos (PDF) - ON Semiconductor
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MJE210G Datasheet PDF : 6 Pages
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MJE200G (NPN), MJE210G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125_C)
Emitter Cutoff Current
(VBE = 8.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 5.0 Adc, VCE = 2.0 Vdc)
Collector−Emitter Saturation Voltage (Note 1)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
Base−Emitter Saturation Voltage (Note 1)
(IC = 5.0 Adc, IB = 1.0 Adc)
VCEO(sus)
25
ICBO
−
−
IEBO
−
hFE
70
45
10
VCE(sat)
−
−
−
VBE(sat)
−
Vdc
−
100
nAdc
100
mAdc
nAdc
100
−
−
180
−
Vdc
0.3
0.75
1.8
Vdc
2.5
Base−Emitter On Voltage (Note 1)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
1.6
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
MHz
65
−
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJE200G
MJE210G
Cob
pF
−
80
−
120
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300Ăms, Duty Cycle [ 2.0%.
2. fT = ⎪hfe⎪• ftest.
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
0
20
40
60
80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
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