FGB3245G2-F085 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

FGB3245G2-F085

EcoSPARK®2 320mJ, 450V, N-Channel Ignition IGBT

ON Semiconductor 

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Dynamic Characteristics

QG(ON) Gate Charge

VGE(TH) Gate to Emitter Threshold Voltage

VGEP Gate to Emitter Plateau Voltage

ICE = 10A, VCE = 12V,

VGE = 5V

ICE = 1mA, VCE = VGE,

VCE = 12V, ICE = 10A

TJ = 25oC

TJ = 150oC

Switching Characteristics

td(ON)R

trR

td(OFF)L

tfL

ESCIS

Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω

Current Rise Time-Resistive

VGE = 5V, RG = 1KΩ

TJ = 25oC,

Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH,

Current Fall Time-Inductive

VGE = 5V, RG = 1KΩ

ICE = 6.5A, TJ = 25oC,

Self Clamped Inductive Switching

L = 3.0 mHy,RG = 1KΩ,

VGE = 5V, (Note 1)

TJ = 25°C

Thermal Characteristics

RθJC Thermal Resistance Junction to Case All packages

Min Typ Max Units

- 23 - nC

1.3 1.6 2.2

V

0.75 1.1 1.8

- 2.7 -

V

- 0.9 4 μs

- 2.6 7 μs

- 5.4 15 μs

- 2.7 15 μs

-

- 320 mJ

-

- 0.9 oC/W

Notes:

1: Self

Tj=25oC;

Clamping

L=3mHy,

Inductive Switching Energy (ESCIS25) of

ISCIS=14.6A,VCC=100V during inductor

320 mJ is based on the test conditions

charging and VCC=0V during the time

that starting

in clamp.

Tj=21: S50eolfCC;laLm=3pminHgyI,nIdSuCcISti=ve10S.9wAit,cVhCinCg=E10n0eVrgydu(ErinSgCISin1d5u0)ctoofr1c8h0amrgJinigs

based on the

and VCC=0V

test conditions that starting

during the time in clamp.

www.onsemi.com

3

Share Link: