FGB3245G2-F085 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
FGB3245G2-F085 Datasheet PDF : 8 Pages
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Typical Performance Curves (Continued)
40
VGE = 8.0V
VGE = 5.0V
30 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
10
TJ = 175oC
0
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
30
VGE = 5.0V
20
10
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 9. DC Collector Current vs. Case
Temperature
10000
1000
VECS = 24V
100
10
VCES = 300V
1
0.1
-50
VCES = 250V
-25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Leakage Current vs. Junction
Temperature
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30 VCE = 5V
20
TJ = 175oC
10
TJ = 25oC
TJ = -40oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
1.8
VCE = VGE
ICE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Threshold Voltage vs. Junction
Temperature
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
10
8
Inductive tOFF
6
4
2
Resistive tON
0
25
50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Switching Time vs. Junction
Temperature
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