IXGR50N60B2 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGR50N60B2
IXYS CORPORATION
IXGR50N60B2 Datasheet PDF : 6 Pages
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IXGR 50N60B2
IXGR 50N60B2D1
Symbol
g
fs
C
ies
Coes
Cres
Qg
Qge
Q
gc
td(on)
tri
td(off)
tfi
Eoff
t
d(on)
tri
Eon
t
d(off)
tfi
Eoff
RthJ-DCB
R
thJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
I = 40 A; V = 10 V,
C
CE
Note 1
40 55
S
3500
pF
VCE= 25 V, VGE = 0 V, f = 1 MHz
50N60B2
240
pF
50N60B2D1 280
pF
50
pF
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
140
nC
23
nC
44
nC
Inductive load, T = 25°C
J
I = 40 A, V = 15 V
C
GE
V
CE
=
480
V,
R
G
=
R
off
=
5.0
Ω
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5.0 Ω
(Note 2)
(Note 3)
18
ns
25
ns
190 300 ns
65
ns
0.55 0.85 mJ
18
ns
25
ns
0.9
mJ
290
ns
140
ns
1.55
mJ
0.31
K/W
0.62 K/W
0.15
K/W
ISOPLUS 247 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
V = 100 V
R
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
2.0 V
1.39
8.3 A
35
ns
0.85 K/W
Notes 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate.
3: RthJC is the thermal resistance junction-to-external side of DCB substrate.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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