IXGR50N60B2 Ver la hoja de datos (PDF) - IXYS CORPORATION
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componentes Descripción
Fabricante
IXGR50N60B2
IXYS CORPORATION
IXGR50N60B2 Datasheet PDF : 6 Pages
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IXGR 50N60B2
IXGR 50N60B2D1
Fig. 7. Transconductance
80
70 TJ = -40ºC
25ºC
60
125ºC
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
I C - Amperes
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
5
Fig. 8. Dependence of Turn-Off
Energy on RG
TJ = 125ºC
VGE = 15V
VCE = 480V
IC = 80A
IC = 40A
IC = 20A
10 15 20 25 30 35 40 45 50
R G - Ohms
Fig. 9. Dependence of Turn-Off
Energy on IC
4
RG = 5Ω
3.5
RG = 24.4 Ω - - - -
VGE = 15V
3
VCE = 480V
2.5
TJ = 125ºC
2
1.5
TJ = 25ºC
1
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
4
RG = 5Ω
3.5
RG = 24.4Ω - - -
VGE = 15V
3
VCE = 480V
IC = 80A
2.5
2
1.5
IC = 40A
1
0.5
0
20
30
40
50
60
70
80
I C - Amperes
0.5
IC = 20A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
1000
500
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
td(off)
tfi - - - - - -
TJ = 125ºC
VGE = 15V
VCE = 480V
IC = 80A
IC = 40A
IC = 20A
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on IC
400
td(off)
350
tfi - - - - - -
RG = 5Ω
300
VGE = 15V
250
VCE = 480V
TJ = 125ºC
200
150
100
TJ = 25ºC
50
100
5 10 15 20 25 30 35 40 45 50
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
0
20
5,237,481
5,187,117
30
5,381,025
5,486,715
40
50
60
70
80
I C - Amperes
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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