BCW69 Ver la hoja de datos (PDF) - Continental Device India Limited
Número de pieza
componentes Descripción
Fabricante
BCW69 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW69
BCW70
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCW69 = H1
BCW70 = H2
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at Tj = 25 °C
–IC = 2 mA; –VCE = 5 V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V
Noise figure at RS = 2 kΩ
–IC = 200 µA; –VCE = 5 V;
f = 1 kHz; B = 200 Hz
BCW69
>
120
hFE <
260
–VCB0 max.
–VCE0 max.
–ICM max.
Ptot max.
Tj
max.
BCW70
215
500
50
V
45
V
200
mA
250
mW
150
°C
fT
typ.
150
MHz
F
<
10
dB
Continental Device India Limited
Data Sheet
Page 1 of 4
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