BCW69 Ver la hoja de datos (PDF) - Continental Device India Limited
Número de pieza
componentes Descripción
Fabricante
BCW69 Datasheet PDF : 4 Pages
| |||
BCW69
BCW70
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
–IC = 2 mA
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
Ti = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 20 V
IE = 0; –VCB = 20 V; Tj = 100 °C
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V
Saturation voltages
–IC = 10 mA; –lB = 0,5 mA
–IC = 50 mA; –lB = 2,5 mA
D.C. current gain
–IC = 10 µA; –VCE = 5 V
hFE
–IC = 2 mA; –VCE = 5 V
hFE
Collector capacitance at f: 1 MHz
lE = Ie = 0; –VCB = 10 V
Cc
Transition frequency at f = 35 MHz
–IC: 10 mA; –VCE = 5 V
fT
Noise figure at RS = 2 kΩ
–IC = 200 µA; –VCE = 5 V
f = 1 kHz; B = 200 Hz
F
–VCB0 max.
–VCES max.
50 V
50 V
–VCE0
–VEB0
–IC
–ICM
Ptot
Tstg
Tj
max. 45 V
max. 5 V
max. 100 mA
max. 200 mA
max. 250 mW
–55 to +150 °C
max. 150 °C
Rth j–a =
500 K/W
–ICB0 <
–ICB0 <
100 nA
10 µA
–VBE 600 to 750 mV
–VCEsat typ.
<
–VBEsat typ.
80 mV
300 mV
720 mV
–VCEsat typ.
–VBEsat typ.
150 mV
810 mV
BCW69
typ. 90
BCW70
150
>
120
215
<
260
500
typ.
4,5
pF
typ.
150
MHz
<
10
dB
Continental Device India Limited
Data Sheet
Page 2 of 4
Share Link: 