2SC2209 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC2209 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
lc=1mA; IE=0
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 2mA; \B-~- 0
VcE(sat) Collector-Emitter Saturation Voltage IC=1.5A; IB= 150mA
VBE(sat) Base-Emitter Saturation Voltage
lc= 2A; IB= 0.2rnA
ICBO
Collector Cutoff Current
VCB= 20V; IE 0
ICEO
Collector Cutoff Current
VCE=10V;IB- 0
ICEO
Collector Cutoff Current
VEB= 5V; lc 0
HFE
DC Current Gain
lc= 1A;VCE=5V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VOB= 5V
COB
Output Capacitance
IE=0;VCB=5V, f,est=1MHz
hFE Classifications
Q
R
80-160 120-220
2SC2209
MIN TYP. MAX UNIT
50
V
40
V
1.0
V
1.5
V
1
MA
100 U A
10 M A
80
220
150
MHz
50
PF
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