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2SC2209

Silicon NPN Power Transistor

New Jersey Semiconductor 

20 STERNAVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, (inc..

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC2209

DESCRIPTION

• Collector-Emitter Breakdown Voltage- ,

: V(BR)CEo= 40V(Min)

• High Collector Power Dissipation

• Complement to Type 2SA963

APPLICATIONS

• Designed for low frequency power amplification.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

50

V

VGEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

Ic

Collector Current-Continuous

1.5

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@ TC=25"C

Tj

Junction Temperature

3

A

10

W

150

"C

Tstg

Storage Temperature Range

-55-150

"C

• .-<;

i

, 2;

PIN 1. EMITTER

2. COLLECT OR

3. BASE

TO-126 package

a-~r

r ;o

\ JT

H

V

1 T '

1 D-» -*

••••* G r•—

"" ' —

t '»

'>

A

ik L1

K ~~"" |~-J

•-R

ji

fi D r .., ,, .,,„

I« •

• I*- 1.1*.

33

mm

DIM WIN MAX

A 10.70 10.93

B

7.70

7.SO

f^

D

2.60

0.66

2,80

0.86

F

3.10

3,30

0

4.43

4.63

H

2.00

2,20

J

1.35

11 .55

K 15.30 16,30

0

3.70

3,90

R 0,40 ft.so

V

117 137

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout

notice. Information furnished by N.I Semi-Conductors is believed to he holh accurate and reliable at the time of cuin

to press. I loue\cr. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

N.I Sonii-Conduclois ent.-oiira.ues customers to verily that datasheets are current before placing orders.

Quality Semi-Conductors

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