PUMH10 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47kΩ

NXP Semiconductors. 

NXP Semiconductors

PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

7. Characteristics

Table 8. Characteristics

Tamb = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Per transistor

ICBO

collector-base

cut-off current

VCB = 50 V; IE = 0 A

ICEO

IEBO

collector-emitter

cut-off current

emitter-base

cut-off current

VCE = 30 V; IB = 0 A

VCE = 30 V; IB = 0 A;

Tj = 150 C

VEB = 5 V; IC = 0 A

hFE

VCEsat

DC current gain

collector-emitter

saturation voltage

VCE = 5 V; IC = 10 mA

IC = 5 mA; IB = 0.25 mA

VI(off)

off-state input

voltage

VCE = 5 V; IC = 100 A

VI(on)

on-state input

voltage

VCE = 0.3 V; IC = 5 mA

R1

bias resistor 1 (input)

R2/R1 bias resistor ratio

Cc

collector capacitance VCB = 10 V; IE = ie = 0 A;

f = 1 MHz

fT

transition frequency VCB = 5 V; IC = 10 mA;

f = 100 MHz

[1] Characteristics of built-in transistor.

Min Typ Max Unit

-

-

100 nA

-

-

100 nA

-

-

5

A

-

-

180 A

100 -

-

-

-

100 mV

-

0.6 0.5 V

1.1 0.75 -

V

1.54 2.20 2.86 k

17 21 26

-

-

2.5 pF

[1] -

230 -

MHz

PEMH10_PUMH10

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 20 December 2011

© NXP B.V. 2011. All rights reserved.

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