PUMH10 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47kΩ

NXP Semiconductors. 

NXP Semiconductors

PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

400

Ptot

(mW)

300

006aac749

200

100

0

-75

-25

25

75

125

175

Tamb (°C)

SOT363 and SOT666; FR4 PCB, standard footprint

Fig 1. Per device: Power derating curve

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter

Conditions

Per transistor

Rth(j-a)

thermal resistance from in free air

junction to ambient

PEMH10 (SOT666)

PUMH10 (SOT363)

Per device

Rth(j-a)

thermal resistance from in free air

junction to ambient

PEMH10 (SOT666)

PUMH10 (SOT363)

Min Typ Max

[1]

[2] -

-

625

-

-

625

[1]

[2] -

-

417

-

-

417

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

Unit

K/W

K/W

K/W

K/W

PEMH10_PUMH10

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 20 December 2011

© NXP B.V. 2011. All rights reserved.

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