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PUMH10 Datasheet PDF : 16 Pages
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NXP Semiconductors
PEMH10; PUMH10
NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb 25 C
[1]
PEMH10 (SOT666)
[2] -
PUMH10 (SOT363)
-
Per device
Ptot
total power dissipation
Tamb 25 C
[1]
PEMH10 (SOT666)
[2] -
PUMH10 (SOT363)
-
Tj
junction temperature
-
Tamb
ambient temperature
65
Tstg
storage temperature
65
Max Unit
50
V
50
V
5
V
+12
V
5
V
100
mA
100
mA
200
mW
200
mW
300
mW
300
mW
150
C
+150 C
+150 C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMH10_PUMH10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 20 December 2011
© NXP B.V. 2011. All rights reserved.
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