Q67040-S4498 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

Q67040-S4498

High Speed IGBT in NPT-technology

Infineon Technologies 

2,0m J

*) E on include losses

due to diode recovery

1,0m J

SGP20N60HS

SGW20N60HS

*) Eon include losses

E ts*

due to diode recovery

Eon*

1,0 mJ

E off

0,5 mJ

E ts *

Eon*

E off

0,0m J

0A

10A

20A

30A

40A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, RG=16Ω,

Dynamic test circuit in Figure E)

0,0 mJ

0Ω

10Ω

20Ω

30Ω

40Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, IC=20A,

Dynamic test circuit in Figure E)

*) Eon include losses

due to diode recovery

0,75mJ

Ets*

0,50mJ

Eon*

0,25mJ Eoff

0,00mJ

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=400V,

VGE=0/15V, IC=20A, RG=16Ω,

Dynamic test circuit in Figure E)

100K/W

D=0.5

0.2

10-1K/W 0.1

0.05

0.02

10-2K/W

0.01

10-3K/W

single pulse

R,(K/W)

0.1882

0.3214

0.1512

0.0392

τ, (s)

0.1137

2.24*10-2

7.86*10-4

9.41*10-5

R1

R2

C1=τ1/R1 C2=τ2/R2

10-4K/W

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 16. IGBT transient thermal resistance

(D = tp / T)

Power Semiconductors

7

Rev.2 Aug-02

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