SGP20N60HS
SGW20N60HS
τr11
Tj (t)
p(t)
r1
τ2
r2
r2
τrnn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Published by
Infineon Technologies AG,
Power Semiconductors
10
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
an d Stray capacity Cσ =40pF.
Rev.2 Aug-02