DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TOP209 Ver la hoja de datos (PDF) - Power Integrations, Inc

Número de pieza
componentes Descripción
Fabricante
TOP209
Power-Integrations
Power Integrations, Inc Power-Integrations
TOP209 Datasheet PDF : 16 Pages
First Prev 11 12 13 14 15 16
TOP209/210
Parameter
OUTPUT
ON-State
Resistance
OFF-State
Current
Breakdown
Voltage
Conditions
(Unless Otherwise Specified)
Symbol
See Figure 12
Min
SOURCE = 0 V
TJ = -40 to 125 °C
RDS(ON)
IDSS
BVDSS
I = 25 mA
D
TJ = 25 °C
TJ = 100 °C
See Note B
VDS = 560 V, TA = 125 °C
See Note B, ID = 100 µA, TA = 25 °C 700
Rise
Time
Fall
Time
tR
Measured
in a Typical
t
Flyback Converter Application
F
DRAIN Supply
Voltage
See Note C
36
SUPPLY
Shunt Regulator
Voltage
V
C(SHUNT)
I = 4 mA
C
5.5
Shunt Regulator
Temperature Drift
Typ Max
31.2 36.0
51.4 59.4
250
100
50
5.8
6.1
±50
Units
µA
V
ns
ns
V
V
ppm/°C
ICD1
CONTROL Supply/
Discharge Current
ICD2
Output MOSFET Enabled
Output MOSFET Disabled
0.6
1.2
1.6
mA
0.5
0.8
1.1
NOTES:
A. For specifications with negative values, a negative temperature coefficient corresponds to an increase in magnitude
with increasing temperature, and a positive temperature coefficient corresponds to a decrease in magnitude with
increasing temperature.
B. The breakdown & leakage measurements can be accomplished by using the TOPSwitch auto-restart feature. The
divide-by-8 counter in the auto-restart circuitry disables the output MOSFET from switching in 7 out of 8 cycles. To
place the TOPSwitch in one of these cycles, the following procedure can be carried out using the modified circuit of
Figure 12:
11 A
8/97

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]