STPS1150M(2011) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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Fabricante
STPS1150M Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
STPS1150
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
IFSM
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward
current
STmite/flat Tc = 160 °C δ = 0.5
SMA
TL = 160 °C δ = 0.5
DO-41
TL = 150 °C δ = 0.5
STmite/flat
SMA
DO-41
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----)
condition
to
avoid
runaway
for
a
diode
on
its
own
heatsink
Table 3. Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case
Rth(j-l) Junction to lead
Lead length = 10 mm
STmite/STmite flat
SMA
DO-41
Value
Unit
150
V
15
A
1
A
50
50
A
75
1500
W
-65 to + 175
°C
175
°C
Value
20
20
30
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
IR (1) Reverse leakage current
VF (2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 1 A
IF = 2 A
0.2 1.0
µA
0.2 1.0
mA
0.78 0.82
0.62 0.67
V
0.85 0.89
0.69 0.75
1. tp = 5 ms, δ < 2%
2. tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.59 x IF(AV) + 0.08 IF2(RMS)
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Doc ID 9472 Rev 5
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