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STPS1150M(2011) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STPS1150M
(Rev.:2011)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS1150M Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
STPS1150
Figure 7.
Non repetitive surge peak
forward current versus overload
duration - maximum values
IM(A)
8
SMA
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Figure 8.
Non repetitive surge peak forward
current versus overload duration
- maximum values
IM(A)
8
7
DO-41
6
Ta=25°C
5
Ta=75°C
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=125°C
1.E+00
Figure 9.
Relative variation of thermal
Figure 10. Relative variation of thermal
impedance junction to case versus
impedance junction to case versus
pulse duration
pulse duration
1.0 Zth(j-c)/Rth(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-04
STmite
1.E-03
1.E-02
tp(s)
1.E-01
1.0 Zth(j-c)/Rth(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 Single pulse
0.1
0.0
1.E-04
STmite flat
1.E-03
1.E-02
tp(s)
1.E-01
Figure 11. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 12. Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.0 Zth(j-a)/Rth(j-a)
0.9
SMA
1.0 Zth(j-a)/Rth(j-a)
0.9
DO-41
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
Single pulse
0.2
0.3
Single pulse
0.2
0.1
0.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
tp(s)
1.E+03
0.1
0.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
tp(s)
1.E+03
4/11
Doc ID 9472 Rev 5

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