ZVP1320A Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

ZVP1320A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

ZVP1320A

TYPICAL CHARACTERISTICS

60

50

VDS=-10V

40

30

20

10

0

0

-2

-4

-6

-8

-10

VGS-Gate Source Voltage (Volts)

Transconductance v gate-source voltage

0

-2

ID= -150mA

-4

VDS=

-50V -100V -200V

-6

-8

-10

-12

-14

-16

0

1.0

2.0

3.0 4.0

5.0

6.0

Q-Charge (nC)

Gate charge v gate-source voltage

1000

100

VGS=-5V

-6V

-8V

-10V

-20V

10

-1

-10

-100

ID-Drain Current (mA)

-1000

On-resistance v drain current

2.4

2.2

2.0

1.8

1.6

1.4

1.2

Drain-Source

Resistance

RDS(on)

VGS=-10V

ID=-50mA

VGS=VDS

1.0

0.8

Gate

Threshold

Voltage

ID=-1mA

VGS(TH)

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140 160 180

T-Temperature (°C)

Normalised RDS(on) and VGS(th) vs Temperature

3-416

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