FDS6875 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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Fabricante
FDS6875 Datasheet PDF : 8 Pages
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November 1998
FDS6875
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored to
minimize the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging and protection circuits.
Features
-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V,
RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1
D1
FD68S75
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
5
6
7
8
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS6875
-20
±8
-6
-20
2
1.6
1
0.9
-55 to 150
78
40
SOIC-16
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS6875 Rev.C
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