FDS6875 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDS6875 Datasheet PDF : 8 Pages
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Typical Electrical Characteristics (continued)
5
ID= -6A
4
3
V DS =
-5V
-10V
-15V
2
1
0
0
5
10
15
20
25
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
10
RDS(ON) LIMIT
3
0.5
0.05
VGS = -4.5V
SINGLE PULSE
RθJA = 135° C/W
TA = 25° C
100us
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
0.3
1
2
5
10
30
- VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4000
2000
C iss
1000
500
Coss
200 f = 1 MHz
VGS = 0 V
C rss
100
0.1 0.2
0.5
1
2
5
10
20
- VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA =135°C/W
TA = 25°C
0.1
0.5
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 135°C/W
P(pk)
t1 t 2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6875 Rev.C
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