BD825 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BD825

NPN power transistors

Philips Electronics 

Philips Semiconductors

NPN power transistors

Product specification

BD825; BD829

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• General purpose

• Driver stages in hi-fi amplifiers and television circuits.

DESCRIPTION

NPN power transistor in a TO-202; SOT128B plastic

package. PNP complements: BD826 and BD830.

PINNING

PIN

1

2

3

handbook, halfpage

DESCRIPTION

emitter

collector, connected to metal part of

mounting surface

base

2

3

1

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

collector-base voltage

BD825

BD829

VCEO

collector-emitter voltage

BD825

BD829

ICM

peak collector current

Ptot

total power dissipation

hFE

DC current gain

fT

transition frequency

12 3

MAM305

Fig.1 Simplified outline (TO-202; SOT128B)

and symbol.

CONDITIONS

open emitter

open base

Tamb ≤ 25 °C

Tmb ≤ 50 °C

IC = 150 mA; VCE = 2 V

IC = 50 mA; VCE = 5 V; f = 100 MHz

MIN. TYP. MAX. UNIT

−

−

45

V

−

−

100 V

−

−

45

V

−

−

80

V

−

−

1.5 A

−

−

2

W

−

−

8

W

95

−

165

−

250 −

MHz

1998 May 29

2

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